PART |
Description |
Maker |
HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171 |
256k x 16-Bit Dynamic RAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
|
MX26C2000BQI-15 MX26C2000BTC-10 MX26C2000BTI-10 MX |
DIODE SCHOTTKY 15V 2X35A TO247AD SWITCH PB SPST-NO .4VA SOLDERLUG CONNECTOR ACCESSORY 2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 IC HALF BRIDGE DRVR HS 2A 16-DIP 256K X 8 FLASH 12V PROM, 90 ns, PQCC32 2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
TC55VD836FF-150 TC55VD836FF-133 TC55VD836FF-143 |
256K Word x 36 Bit Synchronous No-turnround Static RAM(256K 字x36位同步无转向静RAM) 256K字36位同步无具体时间的静态RAM56K字x36位同步无转向静态内存)
|
Toshiba Corporation Toshiba, Corp.
|
MCM6229A-45 MCM6229AWJ20R2 |
256K X 4 BIT STATIC RANDOM ACCESS MEMORY 256K X 4 STANDARD SRAM, 20 ns, PDSO28
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q671 |
256k x 16 Bit FPM DRAM 5 V 60 ns 256k x 16 Bit FPM DRAM 5 V 50 ns 256k x 16-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
LP62S2048A-I LP62S2048AM-55LLI LP62S2048AM-70LLI L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM ER 22C 18#16 4#12 SKT PLUG
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
MCM6929A MCM6929AWJ10 MCM6929AWJ10R MCM6929AWJ12 M |
256K x 4 Bit Fast Static Random Access Memory 256K X 4 STANDARD SRAM, 10 ns, PDSO32
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc] MOTOROLA INC
|
EN29F002 EN29F002N EN29F002T-70J EN29F002T-90TI EN |
2 Megabit (256K x 8-bit) Flash Memory 2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V -10% for both read/write operation. With RESET function.
|
Eon Silicon Solution N.A. ETC[ETC]
|
MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111M |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE 256K X 16 OTPROM, 90 ns, PDIP40 SIGN, NO SMOKING, 250X350MM, RP; RoHS Compliant: NA
|
Macronix International Co., Ltd. PROM MCNIX[Macronix International]
|
27C2000 MX27C2000 MX27C2000MC-10 MX27C2000MC-12 MX |
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDSO32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PDIP32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 90 ns, PQCC32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85 256K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 85 256K X 8 OTPROM, 45 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85 Single Output LDO, 3.0A, Fixed(3.3V), Fast Transient Response, Reverse Current Protection 5-DDPAK/TO-263 -40 to 85
|
MACRONIX INTERNATIONAL CO LTD PROM Macronix International Co., Ltd. MCNIX[Macronix International]
|
K3N3C6000D-DC K3N3C6000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40 4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet
|
Samsung Electronic
|